Renesas Electronics Corporation Memory IDT71V2558S100BG8

The IDT71V2558S100BG8 is a 3.3V synchronous ZBT,Ñ¢ SRAM with a memory configuration of 256K x 18 bits, designed for high-performance applications. It operates at speeds up to 200 MHz, providing a 3.2 ns clock-to-data access time. This memory device features Zero Bus Turnaround (ZBT) technology, which eliminates dead cycles between read and write operations, enhancing overall system efficiency. The SRAM includes a burst counter that allows for four cycles of data output for a single address, with the burst order selectable between linear and interleaved modes via the LBO pin. It supports individual byte write control, enabling selective writing to specific bytes within the data word. The device is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP), as well as in BGA and fine pitch BGA formats, making it suitable for various design requirements. With its combination of high speed, low latency, and flexible operation modes, the IDT71V2558S100BG8 is well-suited for applications requiring fast data access and efficient memory management.