Renesas Electronics Corporation Memory IDT71V016SA10Y8

Description
SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 10ns 44-SOJ
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 10ns 44-SOJ
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V016SA10Y8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 10ns 44-SOJ

SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 10ns 44-SOJ

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IDT71V016SA10Y8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V016SA10Y8
Integrated Circuits (ICs) - Memory IDT71V016SA10Y8
IC SRAM 1MBIT PARALLEL 44SOJ

IC SRAM 1MBIT PARALLEL 44SOJ

Supplier's Site
Memory - IDT71V016SA10Y8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 44-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 44-SOJ

Buy Now Datasheet
IC SRAM 1MBIT PARALLEL 44SOJ

IC SRAM 1MBIT PARALLEL 44SOJ

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V016SA10Y8-ND IDT71V016SA10Y8 IDT71V016SA10Y8 IDT71V016SA10Y8
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits
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