Renesas Electronics Corporation Memory IDT71T75702S80PF8

The IDT71T75702S80PF8 is a 2.5V synchronous SRAM with a capacity of 18 Megabits, organized as 512K x 36 or 1M x 18. It operates at a high speed of 100 MHz, featuring a 7.5 ns clock-to-data access time. This memory device incorporates Zero Bus Turnaround (ZBT) technology, which eliminates dead cycles between read and write operations, enhancing overall performance. The SRAM includes an internally synchronized output buffer enable, allowing for simplified control without the need for an output enable (OE) signal. It supports a single read/write control pin and offers a 4-word burst capability, which can be configured for either interleaved or linear burst sequences. The device also features individual byte write control for selective data writing. Power management is facilitated through a ZZ input for power-down control, and it operates with a core power supply of 2.5V (±5%) and a 2.5V I/O supply (VDDQ). The IDT71T75702S80PF8 is packaged in a JEDEC standard 100-pin plastic thin quad flatpack (TQFP) or a 119-ball grid array (BGA), making it suitable for various applications requiring high-speed memory solutions.