Renesas Electronics Corporation Memory IDT71P74604S250BQG8

Description
IC SRAM 18MBIT PARALLEL 165CABGA
Datasheet
Description
IC SRAM 18MBIT PARALLEL 165CABGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC SRAM 18MBIT PARALLEL 165CABGA

IC SRAM 18MBIT PARALLEL 165CABGA

Supplier's Site Datasheet
Memory - IDT71P74604S250BQG8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 250 MHz 8.4 ns 165-CABGA (13x15)

SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 250 MHz 8.4 ns 165-CABGA (13x15)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IDT71P74604S250BQG8 IDT71P74604S250BQG8
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 8.4 ns 8.4 ns
Density 18000 kbits 18000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71V016SA12BFG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Memory - Memory - Controllers - BQ2205LYPWRG4 - 1154094-BQ2205LYPWRG4 - Win Source Electronics
Specs
Operating Temperature -20 to 70 C (-4 to 158 F)
Package Type SSOP
Supply Voltage 3 V ~ 3.6 V
View Details
4 suppliers
Memory IC and Storage Component - 774-CY62128BLL-70SC - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Volatile; SRAM Chip
Access Time 70 ns
Cycle Time 70 ns
View Details
5 suppliers
Memory - RAM - MT5C1008ECA55L883C - 1232483-MT5C1008ECA55L883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers