Renesas Electronics Corporation Memory IDT71P71804S200BQ

The IDT71P71804S200BQ is an 18Mb DDR II SRAM with a burst of 2, designed for high-speed synchronous memory applications. It features a dual data rate architecture, allowing two data items to be transferred per clock cycle, which maximizes bandwidth on the data bus. The device supports a common read and write data port and operates with a core voltage of 1.8V. This SRAM has a multiplexed address bus and supports various configurations, including 1Mx18 bit organization. It includes a JTAG interface for testing and debugging purposes. The device is packaged in a 165-ball fine pitch ball grid array (fBGA) format, measuring 13mm x 15mm, with a 1.0mm pitch. The IDT71P71804S200BQ is capable of depth expansion through control logic and features HSTL inputs that can be scaled to receive signals from 1.4V to 1.9V. The output drivers are scalable, allowing compatibility with HSTL, 1.8V TTL, or other voltage levels within the specified range. The output impedance can be adjusted from 35 ohms to 70 ohms, providing flexibility for various load conditions. This memory device is suitable for applications requiring high-speed data processing and efficient memory management, making it a viable option for engineers looking to enhance system performance in their projects.