Renesas Electronics Corporation Memory IDT71256L35Y

Description
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 35ns 28-SOJ
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Description
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 35ns 28-SOJ
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Datasheet
Datasheet Summary
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The IDT71256L35Y is a high-speed static RAM device with a capacity of 256K bits, organized as 32K x 8 bits. It features access times of up to 35 nanoseconds and operates with a typical power consumption of 350mW. This memory is designed for low-power applications, offering a standby mode that reduces power consumption to less than 15¬µW when chip select (CS) is high. Additionally, the low-power version supports battery backup operation, allowing for data retention at 2V with a typical consumption of only 5¬µW. The device is manufactured using advanced CMOS technology, ensuring high performance and reliability. It is available in multiple package options, including 28-pin ceramic DIP, 28-pin plastic DIP, 28-pin SOJ, and 32-pin LCC, which facilitates high board-level packing densities. The IDT71256L35Y is compliant with military standards (MIL-STD-883, Class B), making it suitable for applications requiring robust performance in extreme temperature conditions ranging from -55¬8C to +125¬8C. This product is ideal for engineers seeking a reliable and efficient memory solution for military, industrial, or commercial applications.

Datasheet Summary
Powered by GS/AI

The IDT71256L35Y is a high-speed static RAM device with a capacity of 256K bits, organized as 32K x 8 bits. It features access times of up to 35 nanoseconds and operates with a typical power consumption of 350mW. This memory is designed for low-power applications, offering a standby mode that reduces power consumption to less than 15¬µW when chip select (CS) is high. Additionally, the low-power version supports battery backup operation, allowing for data retention at 2V with a typical consumption of only 5¬µW. The device is manufactured using advanced CMOS technology, ensuring high performance and reliability. It is available in multiple package options, including 28-pin ceramic DIP, 28-pin plastic DIP, 28-pin SOJ, and 32-pin LCC, which facilitates high board-level packing densities. The IDT71256L35Y is compliant with military standards (MIL-STD-883, Class B), making it suitable for applications requiring robust performance in extreme temperature conditions ranging from -55¬8C to +125¬8C. This product is ideal for engineers seeking a reliable and efficient memory solution for military, industrial, or commercial applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71256L35Y-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 35ns 28-SOJ

SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 35ns 28-SOJ

Buy Now Datasheet
Memory - SRAM - IDT71256L35Y - 920922-IDT71256L35Y - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - IDT71256L35Y
920922-IDT71256L35Y
Memory - SRAM - IDT71256L35Y 920922-IDT71256L35Y
Manufacturer: Renesas Electronics America Win Source Part Number: 920922-IDT71256L35Y Operating Temperature Range: 0°C ~ 70°C (TA) Features: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 35 ns 28-SOJ Package: Tube Package: 28-BSOJ (0.300", 7.62mm Width) Mounting: Surface Mount Part Status: Obsolete Family Name: IDT71256 Categories: Integrated Circuits (ICs) Case / Package: 28-SOJ ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Quantity per package: 27 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8542.32.0041

Manufacturer: Renesas Electronics America
Win Source Part Number: 920922-IDT71256L35Y
Operating Temperature Range: 0°C ~ 70°C (TA)
Features: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 35 ns 28-SOJ
Package: Tube
Package: 28-BSOJ (0.300", 7.62mm Width)
Mounting: Surface Mount
Part Status: Obsolete
Family Name: IDT71256
Categories: Integrated Circuits (ICs)
Case / Package: 28-SOJ
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Quantity per package: 27
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041

Buy Now Datasheet
Memory - IDT71256L35Y - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-SOJ

SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-SOJ

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IDT71256L35Y - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71256L35Y
Integrated Circuits (ICs) - Memory IDT71256L35Y
IC SRAM 256KBIT PARALLEL 28SOJ

IC SRAM 256KBIT PARALLEL 28SOJ

Supplier's Site
IC SRAM 256KBIT PARALLEL 28SOJ

IC SRAM 256KBIT PARALLEL 28SOJ

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71256L35Y-ND 920922-IDT71256L35Y IDT71256L35Y IDT71256L35Y IDT71256L35Y
Product Name Memory Memory - SRAM - IDT71256L35Y Memory Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type "28-BSOJ (0.300"", 7.62mm Width)" SOJ; 28-SOJ 28-BSOJ (0.300\", 7.62mm Width) SOJ
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