Renesas Electronics Corporation Memory - SRAM - IDT71256L35Y IDT71256L35Y

The IDT71256L35Y is a high-speed static RAM device with a capacity of 256K bits, organized as 32K x 8 bits. It features access times of up to 35 nanoseconds and operates with a typical power consumption of 350mW. This memory is designed for low-power applications, offering a standby mode that reduces power consumption to less than 15¬µW when chip select (CS) is high. Additionally, the low-power version supports battery backup operation, allowing for data retention at 2V with a typical consumption of only 5¬µW. The device is manufactured using advanced CMOS technology, ensuring high performance and reliability. It is available in multiple package options, including 28-pin ceramic DIP, 28-pin plastic DIP, 28-pin SOJ, and 32-pin LCC, which facilitates high board-level packing densities. The IDT71256L35Y is compliant with military standards (MIL-STD-883, Class B), making it suitable for applications requiring robust performance in extreme temperature conditions ranging from -55¬8C to +125¬8C. This product is ideal for engineers seeking a reliable and efficient memory solution for military, industrial, or commercial applications.