Renesas Electronics Corporation Memory IDT6116LA20SO8

Description
SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 20ns 24-SOIC
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Description
SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 20ns 24-SOIC
Request a Quote
Datasheet
Datasheet Summary
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The IDT6116LA20SO8 is a 16K-bit (2K x 8-bit) CMOS static RAM designed for high-speed applications, offering access times of up to 20 ns. It operates with a supply voltage of 5.0V ¬± 10% and is available in a 24-pin SOIC package. This memory device features low power consumption, with the low-power (LA) version capable of operating on a 2V battery while consuming only 1¬µW to 4¬µW during data retention. The IDT6116LA20SO8 is fully static, requiring no clocks or refresh cycles, and is TTL-compatible for both inputs and outputs. It is suitable for military applications, compliant with MIL-STD-883 Class B, and operates across a temperature range of -55¬8C to +125¬8C. This product is ideal for engineers seeking reliable, high-performance memory solutions in demanding environments.

Datasheet Summary
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The IDT6116LA20SO8 is a 16K-bit (2K x 8-bit) CMOS static RAM designed for high-speed applications, offering access times of up to 20 ns. It operates with a supply voltage of 5.0V ¬± 10% and is available in a 24-pin SOIC package. This memory device features low power consumption, with the low-power (LA) version capable of operating on a 2V battery while consuming only 1¬µW to 4¬µW during data retention. The IDT6116LA20SO8 is fully static, requiring no clocks or refresh cycles, and is TTL-compatible for both inputs and outputs. It is suitable for military applications, compliant with MIL-STD-883 Class B, and operates across a temperature range of -55¬8C to +125¬8C. This product is ideal for engineers seeking reliable, high-performance memory solutions in demanding environments.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT6116LA20SO8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 20ns 24-SOIC

SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 20ns 24-SOIC

Buy Now Datasheet
IC SRAM 16KBIT PARALLEL 24SOIC

IC SRAM 16KBIT PARALLEL 24SOIC

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IDT6116LA20SO8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT6116LA20SO8
Integrated Circuits (ICs) - Memory IDT6116LA20SO8
IC SRAM 16KBIT PARALLEL 24SOIC

IC SRAM 16KBIT PARALLEL 24SOIC

Supplier's Site
Memory - IDT6116LA20SO8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Kbit Parallel 20 ns 24-SOIC

SRAM - Asynchronous Memory IC 16Kbit Parallel 20 ns 24-SOIC

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT6116LA20SO8-ND IDT6116LA20SO8 IDT6116LA20SO8 IDT6116LA20SO8
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type SOIC; "24-SOIC (0.295"", 7.50mm Width)" SOIC SOIC; 24-SOIC (0.295\", 7.50mm Width)
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