Renesas Electronics Corporation Gate Drivers HIP6603BECBZ-T

The HIP6603BECBZ-T is a dual MOSFET driver designed for synchronous rectified buck converter applications. It can drive both upper and lower N-Channel MOSFETs with gate drive voltages ranging from 5V to 12V, allowing for optimization between switching and conduction losses. This driver supports high-frequency operation, capable of switching power MOSFETs at frequencies up to 2MHz, with a propagation delay of 30ns and a transition time of 50ns. The device features integrated adaptive shoot-through protection to prevent simultaneous conduction of both MOSFETs, enhancing efficiency and reliability. It includes an internal bootstrap device, simplifying implementation by requiring only an external capacitor. The HIP6603BECBZ-T is available in an 8-lead SOIC package and is RoHS compliant. However, it is noted that this part is not recommended for new designs, and there is no recommended replacement.