Renesas Electronics Corporation Single FETs, MOSFETs HAT2287WP-EL-E

N-Channel 200V 17A (Ta) 30W (Tc) Surface Mount 8-WPAK (3)

MOSFET N-CH 200V 17A 8WPAK Product overview: HAT2287WP-EL-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HAT2287WP-EL-E can be used for catalog matching and distributor lookup.

Manufacturer: Renesas Electronics America
Win Source Part Number: 1178742-HAT2287WP-EL-E
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.renesas.com
Manufacturer Package: 8-PowerWDFN
Power Dissipation (Maximum): 30W
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 17A
Rds On (Maximum) at Id, Vgs: 94mOhm at 8.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 26nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1200pF at 25V