Renesas Electronics Corporation Single FETs, MOSFETs HAT2287WP-EL-E

Description
N-Channel 200V 17A (Ta) 30W (Tc) Surface Mount 8-WPAK (3)
Request a Quote Datasheet
Description
N-Channel 200V 17A (Ta) 30W (Tc) Surface Mount 8-WPAK (3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - HAT2287WP-EL-E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HAT2287WP-EL-E-ND
Single FETs, MOSFETs HAT2287WP-EL-E-ND
N-Channel 200V 17A (Ta) 30W (Tc) Surface Mount 8-WPAK (3)

N-Channel 200V 17A (Ta) 30W (Tc) Surface Mount 8-WPAK (3)

Buy Now Datasheet
FETs - Single - HAT2287WP-EL-E - 1178742-HAT2287WP-EL-E - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - HAT2287WP-EL-E
1178742-HAT2287WP-EL-E
FETs - Single - HAT2287WP-EL-E 1178742-HAT2287WP-EL-E
Manufacturer: Renesas Electronics America Win Source Part Number: 1178742-HAT2287WP-EL -E Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-WPAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.renesas.com Manufacturer Package: 8-PowerWDFN Power Dissipation (Maximum): 30W Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 17A Rds On (Maximum) at Id, Vgs: 94mOhm at 8.5A, 10V Gate Charge (Qg) (Maximum) at Vgs: 26nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1200pF at 25V

Manufacturer: Renesas Electronics America
Win Source Part Number: 1178742-HAT2287WP-EL-E
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.renesas.com
Manufacturer Package: 8-PowerWDFN
Power Dissipation (Maximum): 30W
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 17A
Rds On (Maximum) at Id, Vgs: 94mOhm at 8.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 26nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1200pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT2287WP-EL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HAT2287WP-EL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HAT2287WP-EL-E
MOSFET N-CH 200V 17A 8WPAK

MOSFET N-CH 200V 17A 8WPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET WPAK - Lead Free

MOSFET MOSFET WPAK - Lead Free

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number HAT2287WP-EL-E-ND 1178742-HAT2287WP-EL-E HAT2287WP-EL-E HAT2287WP-EL-E
Product Name Single FETs, MOSFETs FETs - Single - HAT2287WP-EL-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type 8-PowerWDFN SOT3 1200 pF @ 25 V
V(BR)DSS 200 volts
QG 26 nC
Unlock Full Specs
to access all available technical data