Manufacturer: Renesas Electronics America
Win Source Part Number: 067813-HAT2267H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 25A (Ta)
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 2150pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 12.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
N-Channel 80V 25A (Ta) 25W (Tc) Surface Mount LFPAK
MOSFET N-CH 80V 25A LFPAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 067813-HAT2267H-EL-E | HAT2267H-EL-E-ND | HAT2267H-EL-E |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2267H-EL-E | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 80 volts | ||
| PD | 25000 milliwatts |
