Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2266H-EL-E HAT2266H-EL-E

Manufacturer: Renesas Electronics America
Win Source Part Number: 775596-HAT2266H-EL-E
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: SC-100, SOT-669
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Family Name: HAT2266H
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: LFPAK
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 3600pF @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 23W (Tc)
Rds On (Maximum) @ Id, Vgs: 12 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): PSMN012-60YS; BUK7Y7R2-60E; PSMN012-60YS,115; BUK7Y7R2-60EX;
Introduction Date: April 06, 2006
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

MOSFET N-CH 60V 30A LFPAK

N-Channel 60V 30A (Ta) 23W (Tc) Surface Mount LFPAK

MOSFET N-CH 60V 30A LFPAK Product overview: HAT2266H-EL-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HAT2266H-EL-E can be used for catalog matching and distributor lookup.