Renesas Electronics Corporation HAT2195WP-EL-E

The HAT2195R is a silicon N-channel power MOSFET designed for power switching applications. It is packaged in an SOP-8 format and features a drain-to-source voltage rating of 30 V, a continuous drain current of 18 A, and a typical on-resistance of 4.6 mΩ at a gate-source voltage of 10 V. The device supports 4.5 V gate drive, offers high-speed switching, and has a maximum channel dissipation of 2.5 W with a thermal impedance of 50 °C/W on a standard FR4 board. The storage temperature range is from -55 °C to +150 °C.