Renesas Electronics Corporation Single FETs, MOSFETs HAT2171H-EL-E

Description
N-Channel 40V 40A (Ta) 25W (Tc) Surface Mount LFPAK
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Description
N-Channel 40V 40A (Ta) 25W (Tc) Surface Mount LFPAK
Request a Quote Datasheet

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Single FETs, MOSFETs - HAT2171H-EL-E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HAT2171H-EL-E-ND
Single FETs, MOSFETs HAT2171H-EL-E-ND
N-Channel 40V 40A (Ta) 25W (Tc) Surface Mount LFPAK

N-Channel 40V 40A (Ta) 25W (Tc) Surface Mount LFPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2171H-EL-E - 1178709-HAT2171H-EL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2171H-EL-E
1178709-HAT2171H-EL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2171H-EL-E 1178709-HAT2171H-EL-E
Manufacturer: Renesas Electronics America Win Source Part Number: 1178709-HAT2171H-EL- E Packaging: Reel - TR Operating Temperature Range: 150°C (TJ) Package: SC-100, SOT-669 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Manufacturer Homepage: www.renesas.com Manufacturer Package: LFPAK Channel Type Type: N Drain Source Voltage: 40V Gate Charge (Qg) (Maximum) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3750pF @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 25W (Tc) Rds On (Maximum) @ Id, Vgs: 4.8 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): PH4840S; PH4840S,115; BUK9Y3R5-40E; Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1178709-HAT2171H-EL-E
Packaging: Reel - TR
Operating Temperature Range: 150°C (TJ)
Package: SC-100, SOT-669
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Manufacturer Homepage: www.renesas.com
Manufacturer Package: LFPAK
Channel Type Type: N
Drain Source Voltage: 40V
Gate Charge (Qg) (Maximum) @ Vgs: 52nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3750pF @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 25W (Tc)
Rds On (Maximum) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): PH4840S; PH4840S,115; BUK9Y3R5-40E;
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT2171H-EL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HAT2171H-EL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HAT2171H-EL-E
MOSFET N-CH 40V 40A LFPAK

MOSFET N-CH 40V 40A LFPAK

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number HAT2171H-EL-E-ND 1178709-HAT2171H-EL-E HAT2171H-EL-E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2171H-EL-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Package Type SC-100, SOT-669 SOT3 SC-100, SOT-669
QG 52 nC
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