Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2160H-E HAT2160H-E

Manufacturer: Renesas Electronics America Win Source Part Number: 040427-HAT2160H-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 60A (Ta) Gate-Source Threshold Voltage: 2.3V @ 1mA Max Gate Charge: 54nC @ 4.5V Max Input Capacitance: 7750pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.6 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited