Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2160H-E HAT2160H-E

Manufacturer: Renesas Electronics America
Win Source Part Number: 040427-HAT2160H-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 60A (Ta)
Gate-Source Threshold Voltage: 2.3V @ 1mA
Max Gate Charge: 54nC @ 4.5V
Max Input Capacitance: 7750pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.6 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

MOSFET N-CH 20V 60A LFPAK Product overview: HAT2160H-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 60A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-HAT2160H-E can be used for catalog matching and distributor lookup.