Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT1072H-EL HAT1072H-EL

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 067784-HAT1072H-EL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Ta) Max Gate Charge: 155nC @ 10V Max Input Capacitance: 9500pF @ 10V Maximum Gate-Source Voltage: +10V, -20V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 067784-HAT1072H-EL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Ta) Max Gate Charge: 155nC @ 10V Max Input Capacitance: 9500pF @ 10V Maximum Gate-Source Voltage: +10V, -20V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT1072H-EL - 067784-HAT1072H-EL - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT1072H-EL
067784-HAT1072H-EL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT1072H-EL 067784-HAT1072H-EL
Manufacturer: Renesas Electronics America Win Source Part Number: 067784-HAT1072H-EL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Ta) Max Gate Charge: 155nC @ 10V Max Input Capacitance: 9500pF @ 10V Maximum Gate-Source Voltage: +10V, -20V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 067784-HAT1072H-EL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 40A (Ta)
Max Gate Charge: 155nC @ 10V
Max Input Capacitance: 9500pF @ 10V
Maximum Gate-Source Voltage: +10V, -20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Pch Single Power MOSFET -30V -40A 4.5mohm LFPAK - 668-HAT1072H-EL - Utmel Electronic Limited
Hong Kong, China
Pch Single Power MOSFET -30V -40A 4.5mohm LFPAK
668-HAT1072H-EL
Pch Single Power MOSFET -30V -40A 4.5mohm LFPAK 668-HAT1072H-EL
Pch Single Power MOSFET -30V -40A 4.5mohm LFPAK

Pch Single Power MOSFET -30V -40A 4.5mohm LFPAK

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Technical Specifications

  Win Source Electronics Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET
Product Number 067784-HAT1072H-EL 668-HAT1072H-EL
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT1072H-EL Pch Single Power MOSFET -30V -40A 4.5mohm LFPAK
Polarity P-Channel; P-Channel
V(BR)DSS 30 volts
PD 30000 milliwatts
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