Renesas Electronics Corporation Single FETs, MOSFETs HAT1072H-EL-E

P-Channel 30V 40A (Ta) 30W (Tc) Surface Mount LFPAK

Manufacturer: Renesas Electronics America
Win Source Part Number: 204565-HAT1072H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 40A (Ta)
Max Gate Charge: 155nC @ 10V
Max Input Capacitance: 9500pF @ 10V
Maximum Gate-Source Voltage: +10V, -20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

MOSFET P-CH 30V 40A LFPAK Product overview: HAT1072H-EL-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HAT1072H-EL-E can be used for catalog matching and distributor lookup.