Renesas Electronics Corporation Single FETs, MOSFETs HAT1072H-EL-E

Description
P-Channel 30V 40A (Ta) 30W (Tc) Surface Mount LFPAK
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Description
P-Channel 30V 40A (Ta) 30W (Tc) Surface Mount LFPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Single FETs, MOSFETs - HAT1072H-EL-E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HAT1072H-EL-E-ND
Single FETs, MOSFETs HAT1072H-EL-E-ND
P-Channel 30V 40A (Ta) 30W (Tc) Surface Mount LFPAK

P-Channel 30V 40A (Ta) 30W (Tc) Surface Mount LFPAK

Buy Now Datasheet
Transistor - 221906164 - Radwell International
Willingboro, NJ, United States
Transistor
221906164
Transistor 221906164
DISCONTINUED BY MANUFACTURER, TRANSISTOR, P-CHANNEL, MOSFET, 30 V, 40A, 30W, LFPAK, SURFACE MOUNT. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, TRANSISTOR, P-CHANNEL, MOSFET, 30 V, 40A, 30W, LFPAK, SURFACE MOUNT. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT1072H-EL-E - 204565-HAT1072H-EL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT1072H-EL-E
204565-HAT1072H-EL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT1072H-EL-E 204565-HAT1072H-EL-E
Manufacturer: Renesas Electronics America Win Source Part Number: 204565-HAT1072H-EL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Ta) Max Gate Charge: 155nC @ 10V Max Input Capacitance: 9500pF @ 10V Maximum Gate-Source Voltage: +10V, -20V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 204565-HAT1072H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 40A (Ta)
Max Gate Charge: 155nC @ 10V
Max Input Capacitance: 9500pF @ 10V
Maximum Gate-Source Voltage: +10V, -20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT1072H-EL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HAT1072H-EL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HAT1072H-EL-E
MOSFET P-CH 30V 40A LFPAK

MOSFET P-CH 30V 40A LFPAK

Supplier's Site

Technical Specifications

  DigiKey Radwell International Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number HAT1072H-EL-E-ND 221906164 204565-HAT1072H-EL-E HAT1072H-EL-E
Product Name Single FETs, MOSFETs Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT1072H-EL-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type SC-100, SOT-669 SOT3; LFPAK SC-100, SOT-669
V(BR)DSS 30 volts
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