Manufacturer: Renesas Electronics America
Win Source Part Number: 271436-HAT1069C-EL-E
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 6-CMFPAK
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Package: 6-SMD, Flat Leads
Power Dissipation (Maximum): 900mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 12V
Id - Continuous Drain Current: 4A
Rds On (Maximum) at Id, Vgs: 52mOhm at 1.5A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1.2V at 1mA
Gate Charge (Qg) (Maximum) at Vgs: 16nC at 4.5V
Gate Source Voltage (Maximum): ±8V
Input Capacitance (Ciss) (Maximum) at Vds: 1380pF at 10V
MOSFET P-CH 12V 4A 6CMFPAK
MOSFET P-CH 12V 4A 6CMFPAK
| Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 271436-HAT1069C-EL-E | HAT1069C-EL-E | HAT1069C-EL-E |
| Product Name | FETs - Single - HAT1069C-EL-E | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | |
| V(BR)DSS | 12 volts | 12 volts | |
| QG | 16 nC | ||
| PD | 900 milliwatts | 900 milliwatts | |
| TJ | 150 C (302 F) | 150 C (302 F) |
