Renesas Electronics Corporation 12V 4A MOSFET Transistor HAT1069C-EL-E

MOSFET P-CH 12V 4A 6CMFPAK Product overview: HAT1069C-EL-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HAT1069C-EL-E can be used for catalog matching and distributor lookup.

MOSFET P-CH 12V 4A 6CMFPAK

Manufacturer: Renesas Electronics America
Win Source Part Number: 271436-HAT1069C-EL-E
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 6-CMFPAK
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Package: 6-SMD, Flat Leads
Power Dissipation (Maximum): 900mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 12V
Id - Continuous Drain Current: 4A
Rds On (Maximum) at Id, Vgs: 52mOhm at 1.5A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1.2V at 1mA
Gate Charge (Qg) (Maximum) at Vgs: 16nC at 4.5V
Gate Source Voltage (Maximum): ±8V
Input Capacitance (Ciss) (Maximum) at Vds: 1380pF at 10V