Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs H5N3007FL-M0-E#T2

Description
Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet
Description
Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - H5N3007FL-M0-E#T2 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - H5N3007FL-M0-E#T2 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
H5N3007FL-M0-E#T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs H5N3007FL-M0-E#T2
MOSFET N-CH 300V 15A TO220FL

MOSFET N-CH 300V 15A TO220FL

Supplier's Site

Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited
Product Category Power MOSFET RF Transistors
Product Number H5N3007FL-M0-E#T2 H5N3007FL-M0-E#T2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data