Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs H5N2901FN-E

Description
Power Field-Effect Transistor, 18A, 290V, N-Channel MOSFET
  • H5N2901FN-E - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - H5N2901FN-E - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Power Field-Effect Transistor, 18A, 290V, N-Channel MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- H5N2901FN-E - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
H5N2901FN-E
H5N2901FN-E
Power Field-Effect Transistor, 18A, 290V, N-Channel MOSFET

Power Field-Effect Transistor, 18A, 290V, N-Channel MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - H5N2901FN-E - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
H5N2901FN-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs H5N2901FN-E
N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET

Supplier's Site

Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited
Product Category Power MOSFET RF Transistors
Product Number H5N2901FN-E H5N2901FN-E
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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