Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - Bipolar (BJT) H5N2521FN-E#T2

Description
Power Field-Effect Transistor
  • H5N2521FN-E#T2 - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - H5N2521FN-E#T2 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
Power Field-Effect Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- H5N2521FN-E#T2 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
H5N2521FN-E#T2
H5N2521FN-E#T2
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - H5N2521FN-E#T2 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
H5N2521FN-E#T2
Discrete Semiconductor Products - Transistors - Bipolar (BJT) H5N2521FN-E#T2
POWER FIELD-EFFECT TRANSISTOR

POWER FIELD-EFFECT TRANSISTOR

Supplier's Site

Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited
Product Category Power MOSFET Bipolar RF Transistors
Product Number H5N2521FN-E#T2 H5N2521FN-E#T2
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type TO-220; TO-220FN
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