Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - Bipolar (BJT) H5N2521FN-E-AR

Description
Power Field-Effect Transistor
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Description
Power Field-Effect Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - H5N2521FN-E-AR - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - H5N2521FN-E-AR - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
H5N2521FN-E-AR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) H5N2521FN-E-AR
POWER FIELD-EFFECT TRANSISTOR

POWER FIELD-EFFECT TRANSISTOR

Supplier's Site

Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited
Product Category Power MOSFET Bipolar RF Transistors
Product Number H5N2521FN-E-AR H5N2521FN-E-AR
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type TO-220; TO-220FN
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