Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single H5N2305P-E

Description
Win Source Part Number: 1061574-H5N2305P-E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: * Package: Bulk Standard Package: 1 ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Inc Other Names: RENRNSH5N2305P-E,215 6-H5N2305P-E
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Description
Win Source Part Number: 1061574-H5N2305P-E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: * Package: Bulk Standard Package: 1 ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Inc Other Names: RENRNSH5N2305P-E,215 6-H5N2305P-E
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1061574-H5N2305P-E - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1061574-H5N2305P-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1061574-H5N2305P-E
Win Source Part Number: 1061574-H5N2305P-E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Series: * Package: Bulk Standard Package: 1 ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Inc Other Names: RENRNSH5N2305P-E,215 6-H5N2305P-E

Win Source Part Number: 1061574-H5N2305P-E
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Series: *
Package: Bulk
Standard Package: 1
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Other Names: RENRNSH5N2305P-E,2156-H5N2305P-E

Buy Now Datasheet
 - H5N2305P-E - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - H5N2305P-E - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
H5N2305P-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) H5N2305P-E
POWER FIELD-EFFECT TRANSISTOR

POWER FIELD-EFFECT TRANSISTOR

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics Acme Chip Technology Co., Limited
Product Category Bipolar RF Transistors Power MOSFET Bipolar RF Transistors
Product Number 1061574-H5N2305P-E H5N2305P-E H5N2305P-E
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT3 TO-3; TO-3P
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