Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased FA4L4L-T1B-A

Description
Win Source Part Number: 1058444-FA4L4L-T1B-A Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59 ECCN: EAR99 Fake Threat In the Open Market: 58 pct. Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms REACH Status: Vendor Undefined HTSUS: 8541.29.0095 Mfr: Renesas Other Names: 2156-FA4L4L-T1B-A Product Status: Obsolete RoHS Status: RoHS non-compliant
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Description
Win Source Part Number: 1058444-FA4L4L-T1B-A Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59 ECCN: EAR99 Fake Threat In the Open Market: 58 pct. Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms REACH Status: Vendor Undefined HTSUS: 8541.29.0095 Mfr: Renesas Other Names: 2156-FA4L4L-T1B-A Product Status: Obsolete RoHS Status: RoHS non-compliant
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1058444-FA4L4L-T1B-A - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
1058444-FA4L4L-T1B-A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 1058444-FA4L4L-T1B-A
Win Source Part Number: 1058444-FA4L4L-T1B-A Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59 ECCN: EAR99 Fake Threat In the Open Market: 58 pct. Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms REACH Status: Vendor Undefined HTSUS: 8541.29.0095 Mfr: Renesas Other Names: 2156-FA4L4L-T1B-A Product Status: Obsolete RoHS Status: RoHS non-compliant

Win Source Part Number: 1058444-FA4L4L-T1B-A
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
REACH Status: Vendor Undefined
HTSUS: 8541.29.0095
Mfr: Renesas
Other Names: 2156-FA4L4L-T1B-A
Product Status: Obsolete
RoHS Status: RoHS non-compliant

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 - FA4L4L-T1B-A - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Rochester Electronics
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 1058444-FA4L4L-T1B-A FA4L4L-T1B-A
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
Polarity NPN NPN
Package Type SOT3 SC-59-3
IC(max) 100 milliamps
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