Renesas Electronics Corporation Memory 71V65803S100BGI8

Description
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mb (512K x 18) Parallel 100MHz 5ns 119-PBGA (14x22)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mb (512K x 18) Parallel 100MHz 5ns 119-PBGA (14x22)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V65803S100BGI8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mb (512K x 18) Parallel 100MHz 5ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mb (512K x 18) Parallel 100MHz 5ns 119-PBGA (14x22)

Buy Now
Memory - 71V65803S100BGI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 100 MHz 5 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 100 MHz 5 ns 119-PBGA (14x22)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V65803S100BGI8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V65803S100BGI8
Integrated Circuits (ICs) - Memory - Memory 71V65803S100BGI8
IC SRAM 9MBIT PAR 119PBGA

IC SRAM 9MBIT PAR 119PBGA

Supplier's Site
IC SRAM 9MBIT PARALLEL 119PBGA

IC SRAM 9MBIT PARALLEL 119PBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V65803S100BGI8-ND 71V65803S100BGI8 71V65803S100BGI8 71V65803S100BGI8
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits 9000 kbits
Package Type BGA; 119-BGA BGA; 119-BGA BGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27C256-25I/L268 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 250 ns
Density 256 kbits
View Details
Memory - AS4DDR232M72A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR2
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details
Memory - 457780-4830 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Integrated Circuits (ICs) - Memory - Controllers - DP8431VX-33 - Acme Chip Technology Co., Limited
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 68-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers