Renesas Electronics Corporation Memory 71V65703S85BQGI

The 71V65703S85BQGI is a 3.3V synchronous SRAM memory device from Quarktwin Technology Ltd., featuring a capacity of 9 Megabits organized as 256K x 36 bits. It supports high-speed operation with a maximum clock frequency of 100 MHz and a clock-to-data access time of 8.5 ns. This memory device incorporates Zero Bus Turnaround (ZBT) technology, allowing for seamless transitions between read and write operations without dead cycles. The SRAM includes a burst counter for efficient data handling, capable of providing four cycles of data for a single address, with the burst order selectable between linear and interleaved modes. It features three chip enable pins for easy depth expansion and a single read/write control pin. The device is packaged in a 165-ball CABGA format and is suitable for industrial applications with an operating temperature range of -40¬8C to +85¬8C. Power management is facilitated through a power-down mode controlled by the ZZ input, and the device is compliant with green standards. This product is ideal for applications requiring high-speed data access and efficient memory management.