Renesas Electronics Corporation Memory 71V424S10YG

Description
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-SOJ
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-SOJ
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 800-2462-5-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-SOJ

SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-SOJ

Buy Now Datasheet
Memory IC and Storage Component - 774-71V424S10YG - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-71V424S10YG
Memory IC and Storage Component 774-71V424S10YG
IC SRAM 4MBIT PARALLEL 36SOJ Product overview: 71V424S10YG from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V424S10YG can be used for catalog matching and distributor lookup.

IC SRAM 4MBIT PARALLEL 36SOJ Product overview: 71V424S10YG from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V424S10YG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SRAM - 71V424S10YG - 907833-71V424S10YG - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 71V424S10YG
907833-71V424S10YG
Memory - SRAM - 71V424S10YG 907833-71V424S10YG
Manufacturer: Renesas Electronics America Win Source Part Number: 907833-71V424S10YG Operating Temperature Range: 0°C ~ 70°C (TA) Features: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 36-SOJ Package: Tube Package: 36-BSOJ (0.400", 10.16mm Width) Mounting: Surface Mount Family Name: 71V424 Categories: Integrated Circuits (ICs) Case / Package: 36-SOJ ECCN: 3A991B2A Popularity: High Fake Threat In the Open Market: 85 pct. Supply and Demand Status: Balance Quantity per package: 20 MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Other Part Number: IDT71V424S10YG, 800-2462-5, IDT71V424S10YG-ND

Manufacturer: Renesas Electronics America
Win Source Part Number: 907833-71V424S10YG
Operating Temperature Range: 0°C ~ 70°C (TA)
Features: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 36-SOJ
Package: Tube
Package: 36-BSOJ (0.400", 10.16mm Width)
Mounting: Surface Mount
Family Name: 71V424
Categories: Integrated Circuits (ICs)
Case / Package: 36-SOJ
ECCN: 3A991B2A
Popularity: High
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Balance
Quantity per package: 20
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Other Part Number: IDT71V424S10YG, 800-2462-5, IDT71V424S10YG-ND

Buy Now Datasheet
Memory - 71V424S10YG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-SOJ

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-SOJ

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 36SOJ

IC SRAM 4MBIT PARALLEL 36SOJ

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V424S10YG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V424S10YG
Integrated Circuits (ICs) - Memory - Memory 71V424S10YG
IC SRAM 4MBIT PARALLEL 36SOJ

IC SRAM 4MBIT PARALLEL 36SOJ

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 800-2462-5-ND 774-71V424S10YG 907833-71V424S10YG 71V424S10YG 71V424S10YG 71V424S10YG
Product Name Memory Memory IC and Storage Component Memory - SRAM - 71V424S10YG Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Package Type "36-BSOJ (0.400"", 10.16mm Width)" SOJ; Tube SOJ; 36-SOJ 36-BSOJ (0.400\", 10.16mm Width)
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