The 71V416S15BE is a 4Mbit (256K x 16) high-speed CMOS Static RAM from Quarktwin Technology Ltd. It operates with a single 3.3V power supply and features access and cycle times of 15ns, making it suitable for applications requiring fast memory access. The device is designed with a JEDEC center power/GND pinout to minimize noise and includes one chip select and one output enable pin for efficient control. This SRAM is fully static and asynchronous, eliminating the need for clocks or refresh cycles, which simplifies integration into systems. It is available in multiple package types, including a 48-ball grid array (CABGA) and a 44-pin TSOP Type II, providing flexibility for various design requirements. The part is also offered in both commercial and industrial temperature ranges, ensuring reliability across different operating conditions. Engineers considering this memory solution will find it beneficial for high-speed applications where low power consumption and compact packaging are essential.
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 15ns 48-CABGA (9x9)
IC SRAM 4MBIT PARALLEL 48CABGA
SRAM - Asynchronous Memory IC 4Mbit Parallel 15 ns 48-CABGA (9x9)
IC SRAM 4MBIT PARALLEL 48CABGA
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V416S15BE-ND | 71V416S15BE | 71V416S15BE | 71V416S15BE |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | SRAM Chip | 48-TFBGA | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 4000 kbits | 4000 kbits | 4000 kbits |
