Renesas Electronics Corporation Memory 71V416S10BE

Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 48-CABGA (9x9)
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 48-CABGA (9x9)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V416S10BE-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 48-CABGA (9x9)

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 48CABGA

IC SRAM 4MBIT PARALLEL 48CABGA

Supplier's Site Datasheet
Memory - 71V416S10BE - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V416S10BE-ND 71V416S10BE 71V416S10BE
Product Name Memory Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4000 kbits 4000 kbits 4000 kbits
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