Renesas Electronics Corporation Integrated Circuits (ICs) - Memory 71V416L10PHG

Description
Win Source Part Number: 1216120-71V416L10PHG Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 135 Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 4Mb (256K x 16) Access Time: 10 ns Voltage - Supply: 3V ~ 3.6V Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II Temperature Range - Operating: 0°C ~ 70°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel ECCN: 3A991B2A Fake Threat In the Open Market: 73 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Renesas Electronics America Inc Other Names: 800-1476,800-1476-5, IDT71V416L10PHG,800- 1476-ND Base Product Number: 71V416
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Description
Win Source Part Number: 1216120-71V416L10PHG Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 135 Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 4Mb (256K x 16) Access Time: 10 ns Voltage - Supply: 3V ~ 3.6V Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II Temperature Range - Operating: 0°C ~ 70°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel ECCN: 3A991B2A Fake Threat In the Open Market: 73 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Renesas Electronics America Inc Other Names: 800-1476,800-1476-5, IDT71V416L10PHG,800- 1476-ND Base Product Number: 71V416
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Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - 1216120-71V416L10PHG - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1216120-71V416L10PHG
Integrated Circuits (ICs) - Memory 1216120-71V416L10PHG
Win Source Part Number: 1216120-71V416L10PHG Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 135 Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 4Mb (256K x 16) Access Time: 10 ns Voltage - Supply: 3V ~ 3.6V Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II Temperature Range - Operating: 0°C ~ 70°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel ECCN: 3A991B2A Fake Threat In the Open Market: 73 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Renesas Electronics America Inc Other Names: 800-1476,800-1476-5, IDT71V416L10PHG,800- 1476-ND Base Product Number: 71V416

Win Source Part Number: 1216120-71V416L10PHG
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 135
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 4Mb (256K x 16)
Access Time: 10 ns
Voltage - Supply: 3V ~ 3.6V
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Temperature Range - Operating: 0°C ~ 70°C (TA)
Memory Format: SRAM
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
ECCN: 3A991B2A
Fake Threat In the Open Market: 73 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: Renesas Electronics America Inc
Other Names: 800-1476,800-1476-5,IDT71V416L10PHG,800-1476-ND
Base Product Number: 71V416

Buy Now Datasheet
Memory - 800-1476-5-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V416L10PHG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V416L10PHG
Integrated Circuits (ICs) - Memory - Memory 71V416L10PHG
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site Datasheet
Memory - 71V416L10PHG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

Buy Now Datasheet
Sram, 4Mbit, 256Kx16Bit, 10Ns, Tsop-44; Memory Size Renesas - 47AC2627 - Newark, An Avnet Company
Chicago, IL, United States
Sram, 4Mbit, 256Kx16Bit, 10Ns, Tsop-44; Memory Size Renesas
47AC2627
Sram, 4Mbit, 256Kx16Bit, 10Ns, Tsop-44; Memory Size Renesas 47AC2627
SRAM, 4MBIT, 256KX16BIT, 10NS, TSOP-44; Memory Size:4Mbit; SRAM Memory Configuration:256K x 16bit; Supply Voltage Range:3V to 3.6V; Memory Case Style:TSOP; No. of Pins:44Pins; Access Time:10ns; Operating Temperature Min:0°C; RoHS Compliant: Yes

SRAM, 4MBIT, 256KX16BIT, 10NS, TSOP-44; Memory Size:4Mbit; SRAM Memory Configuration:256K x 16bit; Supply Voltage Range:3V to 3.6V; Memory Case Style:TSOP; No. of Pins:44Pins; Access Time:10ns; Operating Temperature Min:0°C; RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd. Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1216120-71V416L10PHG 800-1476-5-ND 71V416L10PHG 71V416L10PHG 71V416L10PHG 47AC2627
Product Name Integrated Circuits (ICs) - Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory Sram, 4Mbit, 256Kx16Bit, 10Ns, Tsop-44; Memory Size Renesas
Memory Category Volatile; SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip SRAM Chip
Access Time 10 ns 10 ns 10 ns 10 ns
Cycle Time 10 ns 10 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 C (32 F)
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