Renesas Electronics Corporation Memory 71V416L10BE8

Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 48-CABGA (9x9)
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 48-CABGA (9x9)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V416L10BE8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 48-CABGA (9x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V416L10BE8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V416L10BE8
Integrated Circuits (ICs) - Memory - Memory 71V416L10BE8
IC SRAM 4MBIT PARALLEL 48CABGA

IC SRAM 4MBIT PARALLEL 48CABGA

Supplier's Site
Memory - 71V416L10BE8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 48CABGA

IC SRAM 4MBIT PARALLEL 48CABGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V416L10BE8-ND 71V416L10BE8 71V416L10BE8 71V416L10BE8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Package Type 48-TFBGA BGA; 48-TFBGA
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