Renesas Electronics Corporation Memory 71V35761S200BGG

The 71V35761S200BGG is a high-speed synchronous SRAM memory device organized as 128K x 36 bits. It operates with a core power supply of 3.3V and features pipelined outputs, burst counter functionality, and single cycle deselect. The device supports various clock speeds, with a maximum frequency of 200 MHz and a clock access time of 3.1 ns for commercial applications. It also offers an industrial temperature range from -40¬8C to +85¬8C for selected speeds. The memory includes a power-down feature controlled by the ZZ input and supports an optional boundary scan JTAG interface compliant with IEEE 1149.1. It is available in multiple package options, including a 100-pin thin quad flatpack (TQFP), a 119-ball grid array (BGA), and a 165 fine pitch ball grid array (fBGA). The device is suitable for applications requiring high-speed data access and efficient memory management.