Renesas Electronics Corporation Memory 71V35761S200BG8

Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)
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Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V35761S200BG8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)

Buy Now
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V35761S200BG8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V35761S200BG8
Integrated Circuits (ICs) - Memory - Memory 71V35761S200BG8
IC SRAM 4.5MBIT PAR 119PBGA

IC SRAM 4.5MBIT PAR 119PBGA

Supplier's Site
Memory - 71V35761S200BG8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V35761S200BG8-ND 71V35761S200BG8 71V35761S200BG8 71V35761S200BG8
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4500 kbits 4500 kbits 4500 kbits 4500 kbits
Package Type BGA; 119-BGA BGA; 119-BGA
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