Renesas Electronics Corporation Memory 71V25761S200BG

Description
IC SRAM 4.5MBIT PARALLEL 119PBGA
Datasheet
Description
IC SRAM 4.5MBIT PARALLEL 119PBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site Datasheet
Memory - 71V25761S200BG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71V25761S200BG 71V25761S200BG
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 3.1 ns 3.1 ns
Density 4500 kbits 4500 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882648P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type SOIC; SOIC
View Details
Memory - AS5C1005 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 to 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - CY14B101L-SP35XCT - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category NVSRAM; NVSRAM; SRAM Chip
Access Time 35 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers