Renesas Electronics Corporation Memory 71V25761S166BGI

Description
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)
Datasheet
Description
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V25761S166BGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)

Buy Now Datasheet
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V25761S166BGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V25761S166BGI
Integrated Circuits (ICs) - Memory - Memory 71V25761S166BGI
IC SRAM 4.5MBIT PAR 119PBGA

IC SRAM 4.5MBIT PAR 119PBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V25761S166BGI 71V25761S166BGI 71V25761S166BGI
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 3.5 ns 3.5 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 4500 kbits 4500 kbits 4500 kbits
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