Renesas Electronics Corporation Memory 71V256S10YG8

Description
IC SRAM 256KBIT PARALLEL 28SOJ
Datasheet
Description
IC SRAM 256KBIT PARALLEL 28SOJ
Datasheet

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Description
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IC SRAM 256KBIT PARALLEL 28SOJ

IC SRAM 256KBIT PARALLEL 28SOJ

Supplier's Site Datasheet
Memory - 71V256S10YG8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 10 ns 28-SOJ

SRAM - Asynchronous Memory IC 256Kbit Parallel 10 ns 28-SOJ

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Integrated Circuits (ICs) - Memory - Memory - 71V256S10YG8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V256S10YG8
Integrated Circuits (ICs) - Memory - Memory 71V256S10YG8
IC SRAM 256KBIT PARALLEL 28SOJ

IC SRAM 256KBIT PARALLEL 28SOJ

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V256S10YG8 71V256S10YG8 71V256S10YG8
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 10 ns 10 ns
Density 256 kbits 256 kbits 256 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
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