The 7164L35TDB is a high-speed CMOS static RAM memory device with a capacity of 64K bits, organized as 8K x 8 bits. It features a maximum access time of 35 nanoseconds, making it suitable for applications requiring fast data retrieval. The device operates from a single 5V power supply and is TTL-compatible, which simplifies integration into existing systems. This memory chip includes a low-power standby mode, activated when the chip select signals are appropriately set, allowing for reduced power consumption during idle periods. The 7164L35TDB is available in a 28-pin CDIP package and is designed to meet military specifications, complying with MIL-STD-883, Class B, ensuring high reliability in demanding environments. The device supports a wide operating temperature range, making it suitable for both industrial and military applications. Additionally, it offers battery backup data retention capability at power supply levels as low as 2V, which is beneficial for applications requiring data preservation during power outages.
IC SRAM 64KBIT PARALLEL 28CDIP Product overview: 7164L35TDB from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-7164L35TDB can be used for catalog matching and distributor lookup.
SRAM - Asynchronous Memory IC 64Kbit Parallel 35 ns 28-CDIP
IC SRAM 64KBIT PARALLEL 28CDIP
IC SRAM 64KBIT PARALLEL 28CDIP
IC SRAM 64K PARALLEL 28CDIP
| ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Lingto Electronic Limited | Acme Chip Technology Co., Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-7164L35TDB | 7164L35TDB | 7164L35TDB | 7164L35TDB | 668-7164L35TDB |
| Product Name | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory | IC SRAM 64K PARALLEL 28CDIP |
| Memory Category | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 35 ns | 35 ns | 35 ns | 35 ns | 35 ns |
| Cycle Time | 35 ns | 35 ns | |||
| Operating Temperature | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) |
