The 7164L35TDB is a high-speed CMOS static RAM memory device with a capacity of 64K bits, organized as 8K x 8 bits. It features a maximum access time of 35 nanoseconds, making it suitable for applications requiring fast data retrieval. The device operates from a single 5V power supply and is TTL-compatible, which simplifies integration into existing systems. This memory chip includes a low-power standby mode, activated when the chip select signals are appropriately set, allowing for reduced power consumption during idle periods. The 7164L35TDB is available in a 28-pin CDIP package and is designed to meet military specifications, complying with MIL-STD-883, Class B, ensuring high reliability in demanding environments. The device supports a wide operating temperature range, making it suitable for both industrial and military applications. Additionally, it offers battery backup data retention capability at power supply levels as low as 2V, which is beneficial for applications requiring data preservation during power outages.
SRAM - Asynchronous Memory IC 64Kbit Parallel 35 ns 28-CDIP
IC SRAM 64KBIT PARALLEL 28CDIP
IC SRAM 64K PARALLEL 28CDIP
IC SRAM 64KBIT PARALLEL 28CDIP
| Quarktwin Technology Ltd. | Lingto Electronic Limited | Utmel Electronic Limited | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 7164L35TDB | 7164L35TDB | 668-7164L35TDB | 7164L35TDB |
| Product Name | Memory | Memory | IC SRAM 64K PARALLEL 28CDIP | Integrated Circuits (ICs) - Memory |
| Memory Category | SRAM; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 35 ns | 35 ns | 35 ns | 35 ns |
| Operating Temperature | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) | |
| Density | 64 kbits | 64 kbits | 64 kbits |
