Renesas Electronics Corporation Memory 7164L35TDB

Description
SRAM - Asynchronous Memory IC 64Kbit Parallel 35 ns 28-CDIP
Description
SRAM - Asynchronous Memory IC 64Kbit Parallel 35 ns 28-CDIP
Datasheet
Datasheet Summary
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The 7164L35TDB is a high-speed CMOS static RAM memory device with a capacity of 64K bits, organized as 8K x 8 bits. It features a maximum access time of 35 nanoseconds, making it suitable for applications requiring fast data retrieval. The device operates from a single 5V power supply and is TTL-compatible, which simplifies integration into existing systems. This memory chip includes a low-power standby mode, activated when the chip select signals are appropriately set, allowing for reduced power consumption during idle periods. The 7164L35TDB is available in a 28-pin CDIP package and is designed to meet military specifications, complying with MIL-STD-883, Class B, ensuring high reliability in demanding environments. The device supports a wide operating temperature range, making it suitable for both industrial and military applications. Additionally, it offers battery backup data retention capability at power supply levels as low as 2V, which is beneficial for applications requiring data preservation during power outages.

Datasheet Summary
Powered by GS/AI

The 7164L35TDB is a high-speed CMOS static RAM memory device with a capacity of 64K bits, organized as 8K x 8 bits. It features a maximum access time of 35 nanoseconds, making it suitable for applications requiring fast data retrieval. The device operates from a single 5V power supply and is TTL-compatible, which simplifies integration into existing systems. This memory chip includes a low-power standby mode, activated when the chip select signals are appropriately set, allowing for reduced power consumption during idle periods. The 7164L35TDB is available in a 28-pin CDIP package and is designed to meet military specifications, complying with MIL-STD-883, Class B, ensuring high reliability in demanding environments. The device supports a wide operating temperature range, making it suitable for both industrial and military applications. Additionally, it offers battery backup data retention capability at power supply levels as low as 2V, which is beneficial for applications requiring data preservation during power outages.

Suppliers

Company
Product
Description
Supplier Links
Memory - 7164L35TDB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 64Kbit Parallel 35 ns 28-CDIP

SRAM - Asynchronous Memory IC 64Kbit Parallel 35 ns 28-CDIP

Buy Now Datasheet
IC SRAM 64KBIT PARALLEL 28CDIP

IC SRAM 64KBIT PARALLEL 28CDIP

Supplier's Site Datasheet
IC SRAM 64K PARALLEL 28CDIP - 668-7164L35TDB - Utmel Electronic Limited
Hong Kong, China
IC SRAM 64K PARALLEL 28CDIP
668-7164L35TDB
IC SRAM 64K PARALLEL 28CDIP 668-7164L35TDB
IC SRAM 64K PARALLEL 28CDIP

IC SRAM 64K PARALLEL 28CDIP

Supplier's Site
Integrated Circuits (ICs) - Memory - 7164L35TDB - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
7164L35TDB
Integrated Circuits (ICs) - Memory 7164L35TDB
IC SRAM 64KBIT PARALLEL 28CDIP

IC SRAM 64KBIT PARALLEL 28CDIP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Utmel Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 7164L35TDB 7164L35TDB 668-7164L35TDB 7164L35TDB
Product Name Memory Memory IC SRAM 64K PARALLEL 28CDIP Integrated Circuits (ICs) - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip
Access Time 35 ns 35 ns 35 ns 35 ns
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Density 64 kbits 64 kbits 64 kbits
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