Renesas Electronics Corporation Memory 70V7519S133BCI8

Description
SRAM - Dual Port, Synchronous Memory IC 9Mb (256K x 36) Parallel 133MHz 4.2ns 256-CABGA (17x17)
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Description
SRAM - Dual Port, Synchronous Memory IC 9Mb (256K x 36) Parallel 133MHz 4.2ns 256-CABGA (17x17)
Request a Quote
Datasheet
Datasheet Summary
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The 70V7519S133BCI8 is a high-speed 256K x 36 synchronous bank-switchable dual-port static RAM from Quarktwin Technology Ltd., designed for applications requiring fast data access. It operates at a maximum speed of 133 MHz with a data access time of 4.2 ns. The device features two independent ports, allowing simultaneous access to any of the 64 independent 4K x 36 memory banks, which enhances flexibility in data handling. This memory chip supports both 3.3V and 2.5V power supply options for I/O and control signals, while the core operates at 3.3V. It is compatible with LVTTL logic levels and includes features such as self-timed write capabilities and separate byte controls for multiplexed bus compatibility. The 70V7519S133BCI8 is suitable for industrial applications, with an operating temperature range of -40¬8C to +85¬8C. The device is packaged in a 256-pin CABGA format, facilitating integration into compact designs. It also supports JTAG features compliant with IEEE 1149.1, which can be beneficial for testing and debugging purposes. Overall, the 70V7519S133BCI8 is a robust option for engineers seeking high-performance dual-port SRAM solutions.

Datasheet Summary
Powered by GS/AI

The 70V7519S133BCI8 is a high-speed 256K x 36 synchronous bank-switchable dual-port static RAM from Quarktwin Technology Ltd., designed for applications requiring fast data access. It operates at a maximum speed of 133 MHz with a data access time of 4.2 ns. The device features two independent ports, allowing simultaneous access to any of the 64 independent 4K x 36 memory banks, which enhances flexibility in data handling. This memory chip supports both 3.3V and 2.5V power supply options for I/O and control signals, while the core operates at 3.3V. It is compatible with LVTTL logic levels and includes features such as self-timed write capabilities and separate byte controls for multiplexed bus compatibility. The 70V7519S133BCI8 is suitable for industrial applications, with an operating temperature range of -40¬8C to +85¬8C. The device is packaged in a 256-pin CABGA format, facilitating integration into compact designs. It also supports JTAG features compliant with IEEE 1149.1, which can be beneficial for testing and debugging purposes. Overall, the 70V7519S133BCI8 is a robust option for engineers seeking high-performance dual-port SRAM solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - 70V7519S133BCI8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Synchronous Memory IC 9Mb (256K x 36) Parallel 133MHz 4.2ns 256-CABGA (17x17)

SRAM - Dual Port, Synchronous Memory IC 9Mb (256K x 36) Parallel 133MHz 4.2ns 256-CABGA (17x17)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70V7519S133BCI8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70V7519S133BCI8
Integrated Circuits (ICs) - Memory - Memory 70V7519S133BCI8
IC SRAM 9MBIT PARALLEL 256CABGA

IC SRAM 9MBIT PARALLEL 256CABGA

Supplier's Site
IC SRAM 9MBIT PARALLEL 256CABGA

IC SRAM 9MBIT PARALLEL 256CABGA

Supplier's Site Datasheet
Memory - 70V7519S133BCI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 133 MHz 4.2 ns 256-CABGA (17x17)

SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 133 MHz 4.2 ns 256-CABGA (17x17)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 70V7519S133BCI8-ND 70V7519S133BCI8 70V7519S133BCI8 70V7519S133BCI8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits 9000 kbits
Package Type 256-LBGA BGA BGA; 256-LBGA
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