Renesas Electronics Corporation Memory 70V657S12DRI

Description
SRAM - Dual Port, Asynchronous Memory IC 1.125Mb (32K x 36) Parallel 12ns 208-PQFP (28x28)
Request a Quote Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 1.125Mb (32K x 36) Parallel 12ns 208-PQFP (28x28)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 800-2318-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Asynchronous Memory IC 1.125Mb (32K x 36) Parallel 12ns 208-PQFP (28x28)

SRAM - Dual Port, Asynchronous Memory IC 1.125Mb (32K x 36) Parallel 12ns 208-PQFP (28x28)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 1316287-70V657S12DRI - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1316287-70V657S12DRI
Integrated Circuits (ICs) - Memory 1316287-70V657S12DRI
Win Source Part Number: 1316287-70V657S12DRI Category: Integrated Circuits (ICs)>Memory Package: Tray Mounting: SMD (SMT) Technology: SRAM - Dual Port, Asynchronous Memory Type: Volatile Memory Size: 1.125Mb (32K x 36) Access Time: 12 ns Voltage - Supply: 3.15V ~ 3.45V Package / Case: 208-BFQFP Supplier Device Package: 208-PQFP (28x28) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel ECCN: 3A991B2A Fake Threat In the Open Market: 53 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Renesas Electronics America Inc Base Product Number: 70V657 Product Status: Obsolete RoHS Status: RoHS non-compliant

Win Source Part Number: 1316287-70V657S12DRI
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Mounting: SMD (SMT)
Technology: SRAM - Dual Port, Asynchronous
Memory Type: Volatile
Memory Size: 1.125Mb (32K x 36)
Access Time: 12 ns
Voltage - Supply: 3.15V ~ 3.45V
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: SRAM
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
ECCN: 3A991B2A
Fake Threat In the Open Market: 53 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: Renesas Electronics America Inc
Base Product Number: 70V657
Product Status: Obsolete
RoHS Status: RoHS non-compliant

Buy Now Datasheet
Singapore
Memory IC and Storage Component
774-70V657S12DRI
Memory IC and Storage Component 774-70V657S12DRI
IC SRAM 1.125MBIT PAR 208PQFP Product overview: 70V657S12DRI from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-70V657S12DRI can be used for catalog matching and distributor lookup.

IC SRAM 1.125MBIT PAR 208PQFP Product overview: 70V657S12DRI from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-70V657S12DRI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IC SRAM 1.125MBIT PAR 208PQFP

IC SRAM 1.125MBIT PAR 208PQFP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70V657S12DRI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70V657S12DRI
Integrated Circuits (ICs) - Memory - Memory 70V657S12DRI
IC SRAM 1.125MBIT PAR 208PQFP

IC SRAM 1.125MBIT PAR 208PQFP

Supplier's Site
Memory - 70V657S12DRI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 1.125Mbit Parallel 12 ns 208-PQFP (28x28)

SRAM - Dual Port, Asynchronous Memory IC 1.125Mbit Parallel 12 ns 208-PQFP (28x28)

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 800-2318-ND 1316287-70V657S12DRI 774-70V657S12DRI 70V657S12DRI 70V657S12DRI 70V657S12DRI
Product Name Memory Integrated Circuits (ICs) - Memory Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1125 kbits 1125 kbits 1125 kbits 1125 kbits
Package Type 208-BFQFP QFP; Tray QFP; 208-BFQFP
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