Renesas Electronics Corporation Integrated Circuits (ICs) - Memory 70V3579S4DRG

Description
IC SRAM 1.125MBIT PAR 208PQFP
Datasheet
Description
IC SRAM 1.125MBIT PAR 208PQFP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - 70V3579S4DRG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
70V3579S4DRG
Integrated Circuits (ICs) - Memory 70V3579S4DRG
IC SRAM 1.125MBIT PAR 208PQFP

IC SRAM 1.125MBIT PAR 208PQFP

Supplier's Site
Memory - 70V3579S4DRG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous Memory IC 1.125Mbit Parallel 4.2 ns 208-PQFP (28x28)

SRAM - Dual Port, Synchronous Memory IC 1.125Mbit Parallel 4.2 ns 208-PQFP (28x28)

Buy Now Datasheet
IC SRAM 1.125MBIT PAR 208PQFP

IC SRAM 1.125MBIT PAR 208PQFP

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 70V3579S4DRG 70V3579S4DRG 70V3579S4DRG
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 4.2 ns 4.2 ns 4.2 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
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