Renesas Electronics Corporation Memory 70T653MS10BC8

Description
SRAM - Dual Port, Asynchronous Memory IC 18Mb (512K x 36) Parallel 10ns 256-CABGA (17x17)
Request a Quote Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 18Mb (512K x 36) Parallel 10ns 256-CABGA (17x17)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70T653MS10BC8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Asynchronous Memory IC 18Mb (512K x 36) Parallel 10ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 18Mb (512K x 36) Parallel 10ns 256-CABGA (17x17)

Buy Now Datasheet
Memory - 70T653MS10BC8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 18Mbit Parallel 10 ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 18Mbit Parallel 10 ns 256-CABGA (17x17)

Buy Now Datasheet
IC SRAM 18MBIT PARALLEL 256CABGA

IC SRAM 18MBIT PARALLEL 256CABGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70T653MS10BC8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70T653MS10BC8
Integrated Circuits (ICs) - Memory - Memory 70T653MS10BC8
IC SRAM 18MBIT PARALLEL 256CABGA

IC SRAM 18MBIT PARALLEL 256CABGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 70T653MS10BC8-ND 70T653MS10BC8 70T653MS10BC8 70T653MS10BC8
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 18000 kbits 18000 kbits 18000 kbits 18000 kbits
Package Type 256-LBGA BGA; 256-LBGA
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