Renesas Electronics Corporation Memory 70T633S10BFI

Description
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 208-CABGA (15x15)
Request a Quote Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 208-CABGA (15x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70T633S10BFI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 208-CABGA (15x15)

SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 208-CABGA (15x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70T633S10BFI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70T633S10BFI
Integrated Circuits (ICs) - Memory - Memory 70T633S10BFI
IC SRAM 9MBIT PARALLEL 208CABGA

IC SRAM 9MBIT PARALLEL 208CABGA

Supplier's Site
Memory - 70T633S10BFI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 208-CABGA (15x15)

SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 208-CABGA (15x15)

Buy Now Datasheet
IC SRAM 9MBIT PARALLEL 208CABGA

IC SRAM 9MBIT PARALLEL 208CABGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 70T633S10BFI-ND 70T633S10BFI 70T633S10BFI 70T633S10BFI
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits 9000 kbits
Package Type 208-LFBGA BGA; 208-LFBGA
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