Renesas Electronics Corporation Memory 70T3589S133DRI8

Description
SRAM - Dual Port, Synchronous Memory IC 2Mbit Parallel 133 MHz 4.2 ns 208-PQFP (28x28)
Datasheet
Description
SRAM - Dual Port, Synchronous Memory IC 2Mbit Parallel 133 MHz 4.2 ns 208-PQFP (28x28)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70T3589S133DRI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous Memory IC 2Mbit Parallel 133 MHz 4.2 ns 208-PQFP (28x28)

SRAM - Dual Port, Synchronous Memory IC 2Mbit Parallel 133 MHz 4.2 ns 208-PQFP (28x28)

Buy Now
IC SRAM 2MBIT PARALLEL 208PQFP

IC SRAM 2MBIT PARALLEL 208PQFP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 70T3589S133DRI8 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
70T3589S133DRI8
Integrated Circuits (ICs) - Memory 70T3589S133DRI8
IC SRAM 2MBIT PARALLEL 208PQFP

IC SRAM 2MBIT PARALLEL 208PQFP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 70T3589S133DRI8 70T3589S133DRI8 70T3589S133DRI8
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 4.2 ns 4.2 ns 4.2 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 2000 kbits 2000 kbits 2000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882794 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - AS8ERLC128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 980000316 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details