Renesas Electronics Corporation Memory 70T3589S133DRI8

Description
SRAM - Dual Port, Synchronous Memory IC 2Mbit Parallel 133 MHz 4.2 ns 208-PQFP (28x28)
Datasheet
Description
SRAM - Dual Port, Synchronous Memory IC 2Mbit Parallel 133 MHz 4.2 ns 208-PQFP (28x28)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70T3589S133DRI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous Memory IC 2Mbit Parallel 133 MHz 4.2 ns 208-PQFP (28x28)

SRAM - Dual Port, Synchronous Memory IC 2Mbit Parallel 133 MHz 4.2 ns 208-PQFP (28x28)

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Integrated Circuits (ICs) - Memory - 70T3589S133DRI8 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
70T3589S133DRI8
Integrated Circuits (ICs) - Memory 70T3589S133DRI8
IC SRAM 2MBIT PARALLEL 208PQFP

IC SRAM 2MBIT PARALLEL 208PQFP

Supplier's Site
IC SRAM 2MBIT PARALLEL 208PQFP

IC SRAM 2MBIT PARALLEL 208PQFP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 70T3589S133DRI8 70T3589S133DRI8 70T3589S133DRI8
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 4.2 ns 4.2 ns 4.2 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 2000 kbits 2000 kbits 2000 kbits
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