Renesas Electronics Corporation Memory 7014S12JG

Description
SRAM - Dual Port, Asynchronous Memory IC 36Kb (4K x 9) Parallel 12ns 52-PLCC (19.13x19.13)
Request a Quote Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 36Kb (4K x 9) Parallel 12ns 52-PLCC (19.13x19.13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 7014S12JG-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Asynchronous Memory IC 36Kb (4K x 9) Parallel 12ns 52-PLCC (19.13x19.13)

SRAM - Dual Port, Asynchronous Memory IC 36Kb (4K x 9) Parallel 12ns 52-PLCC (19.13x19.13)

Buy Now Datasheet
Singapore, Singapore
Memory IC and Storage Component
774-7014S12JG
Memory IC and Storage Component 774-7014S12JG
IC SRAM 36KBIT PARALLEL 52PLCC Product overview: 7014S12JG from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-7014S12JG can be used for catalog matching and distributor lookup.

IC SRAM 36KBIT PARALLEL 52PLCC Product overview: 7014S12JG from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-7014S12JG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 1314796-7014S12JG - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1314796-7014S12JG
Integrated Circuits (ICs) - Memory 1314796-7014S12JG
Win Source Part Number: 1314796-7014S12JG Category: Integrated Circuits (ICs)>Memory Package: Tube Mounting: SMD (SMT) Technology: SRAM - Dual Port, Asynchronous Memory Type: Volatile Memory Size: 36Kb (4K x 9) Access Time: 12 ns Voltage - Supply: 4.5V ~ 5.5V Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13) Temperature Range - Operating: 0°C ~ 70°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Renesas Electronics America Inc Base Product Number: 7014S12

Win Source Part Number: 1314796-7014S12JG
Category: Integrated Circuits (ICs)>Memory
Package: Tube
Mounting: SMD (SMT)
Technology: SRAM - Dual Port, Asynchronous
Memory Type: Volatile
Memory Size: 36Kb (4K x 9)
Access Time: 12 ns
Voltage - Supply: 4.5V ~ 5.5V
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)
Temperature Range - Operating: 0°C ~ 70°C (TA)
Memory Format: SRAM
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: Renesas Electronics America Inc
Base Product Number: 7014S12

Buy Now Datasheet
Memory - 7014S12JG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 36Kbit Parallel 12 ns 52-PLCC (19.13x19.13)

SRAM - Dual Port, Asynchronous Memory IC 36Kbit Parallel 12 ns 52-PLCC (19.13x19.13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 7014S12JG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
7014S12JG
Integrated Circuits (ICs) - Memory - Memory 7014S12JG
IC SRAM 36KBIT PARALLEL 52PLCC

IC SRAM 36KBIT PARALLEL 52PLCC

Supplier's Site
IC SRAM 36KBIT PARALLEL 52PLCC

IC SRAM 36KBIT PARALLEL 52PLCC

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 7014S12JG-ND 774-7014S12JG 1314796-7014S12JG 7014S12JG 7014S12JG 7014S12JG
Product Name Memory Memory IC and Storage Component Integrated Circuits (ICs) - Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type 52-LCC (J-Lead) Tube 52-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V -4.5V; 4.5V ~ 5.5V 4.5V ~ 5.5V 4.5V ~ 5.5V Surface Mount
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 736-DP8430V-33 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 C (32 F)
Address Bus Width 20 bits
View Details
3 suppliers
Memory - 16-3636-01-P - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - MT5C1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details