Renesas Electronics Corporation Memory 70121L35JG8

Description
SRAM - Dual Port, Asynchronous Memory IC 18Kbit Parallel 35 ns 52-PLCC (19.13x19.13)
Description
SRAM - Dual Port, Asynchronous Memory IC 18Kbit Parallel 35 ns 52-PLCC (19.13x19.13)

Suppliers

Company
Product
Description
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Memory - 70121L35JG8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 18Kbit Parallel 35 ns 52-PLCC (19.13x19.13)

SRAM - Dual Port, Asynchronous Memory IC 18Kbit Parallel 35 ns 52-PLCC (19.13x19.13)

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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
70121L35JG8
Integrated Circuits (ICs) - Memory - Memory 70121L35JG8
IC RAM

IC RAM

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Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number 70121L35JG8 70121L35JG8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 35 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 18 kbits 18 kbits
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