Renesas Electronics Corporation Memory 6116SA55TDB

Description
SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 55ns 24-CDIP
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Description
SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 55ns 24-CDIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 6116SA55TDB-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 55ns 24-CDIP

SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 55ns 24-CDIP

Buy Now Datasheet
IC SRAM 16KBIT PARALLEL 24CDIP

IC SRAM 16KBIT PARALLEL 24CDIP

Supplier's Site Datasheet
Memory - 6116SA55TDB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Kbit Parallel 55 ns 24-CDIP

SRAM - Asynchronous Memory IC 16Kbit Parallel 55 ns 24-CDIP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 6116SA55TDB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
6116SA55TDB
Integrated Circuits (ICs) - Memory - Memory 6116SA55TDB
IC SRAM 16KBIT PARALLEL 24CDIP

IC SRAM 16KBIT PARALLEL 24CDIP

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 6116SA55TDB-ND 6116SA55TDB 6116SA55TDB 6116SA55TDB
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Package Type "24-CDIP (0.600"", 15.24mm)" DIP; 24-CDIP (0.600\", 15.24mm)
Supply Voltage 4.5V ~ 5.5V 4.5V ~ 5.5V Through Hole
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