Renesas Electronics Corporation Memory 6116LA25DB

Description
SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 25ns 24-CDIP
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 25ns 24-CDIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 6116LA25DB-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 25ns 24-CDIP

SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 25ns 24-CDIP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 6116LA25DB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
6116LA25DB
Integrated Circuits (ICs) - Memory - Memory 6116LA25DB
IC SRAM 16KBIT PARALLEL 24CDIP

IC SRAM 16KBIT PARALLEL 24CDIP

Supplier's Site
Memory - 6116LA25DB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Kbit Parallel 25 ns 24-CDIP

SRAM - Asynchronous Memory IC 16Kbit Parallel 25 ns 24-CDIP

Buy Now Datasheet
IC SRAM 16KBIT PARALLEL 24CDIP

IC SRAM 16KBIT PARALLEL 24CDIP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 6116LA25DB-ND 6116LA25DB 6116LA25DB 6116LA25DB
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Package Type "24-CDIP (0.600"", 15.24mm)" DIP; 24-CDIP (0.600\", 15.24mm)
Supply Voltage 4.5V ~ 5.5V Through Hole 4.5V ~ 5.5V
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