Renesas Electronics Corporation Single FETs, MOSFETs 2SK4150TZ-E

N-Channel Power MOSFET 250V, 0.4A

N-Channel 250V 400mA (Ta) 750mW (Ta) Through Hole TO-92

2SK4150TZ - N-CHANNEL POWER MOSF Product overview: 2SK4150TZ-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK4150TZ-E can be used for catalog matching and distributor lookup.

Win Source Part Number: 987346-2SK4150TZ-E
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 750mW (Ta)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V
Vgs (Max): ±10V
Temperature Range - Operating: 150°C
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
REACH Status: Vendor Undefined
HTSUS: 8541.29.0095
Mfr: Renesas
Other Names: 2156-2SK4150TZ-E
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
RoHS Status: RoHS non-compliant