Renesas Electronics Corporation Single FETs, MOSFETs 2SK4150TZ-E

Description
N-Channel 250V 400mA (Ta) 750mW (Ta) Through Hole TO-92
Request a Quote Datasheet
Description
N-Channel 250V 400mA (Ta) 750mW (Ta) Through Hole TO-92
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - 2SK4150TZ-E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2SK4150TZ-E-ND
Single FETs, MOSFETs 2SK4150TZ-E-ND
N-Channel 250V 400mA (Ta) 750mW (Ta) Through Hole TO-92

N-Channel 250V 400mA (Ta) 750mW (Ta) Through Hole TO-92

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 987346-2SK4150TZ-E - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
987346-2SK4150TZ-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 987346-2SK4150TZ-E
Win Source Part Number: 987346-2SK4150TZ-E Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 750mW (Ta) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92 Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V Vgs (Max): ±10V Temperature Range - Operating: 150°C ECCN: EAR99 Fake Threat In the Open Market: 59 pct. REACH Status: Vendor Undefined HTSUS: 8541.29.0095 Mfr: Renesas Other Names: 2156-2SK4150TZ-E Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V RoHS Status: RoHS non-compliant

Win Source Part Number: 987346-2SK4150TZ-E
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 750mW (Ta)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V
Vgs (Max): ±10V
Temperature Range - Operating: 150°C
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
REACH Status: Vendor Undefined
HTSUS: 8541.29.0095
Mfr: Renesas
Other Names: 2156-2SK4150TZ-E
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
RoHS Status: RoHS non-compliant

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 - 2SK4150TZ-E - Rochester Electronics
Newburyport, MA, United States
N-Channel Power MOSFET 250V, 0.4A

N-Channel Power MOSFET 250V, 0.4A

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK4150TZ-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK4150TZ-E
2SK4150TZ - N-CHANNEL POWER MOSF

2SK4150TZ - N-CHANNEL POWER MOSF

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET

MOSFET MOSFET

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Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK4150TZ-E-ND 987346-2SK4150TZ-E 2SK4150TZ-E 2SK4150TZ-E 2SK4150TZ-E
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-92; SOT3 TO-92; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA)
QG 3.7 nC
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