Renesas Electronics Corporation 2SK3899(0)-ZK-E1-AY

Description
Nch Single Power Mosfet 60V 84A
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Description
Nch Single Power Mosfet 60V 84A
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Datasheet
Datasheet Summary
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The 2SK3899 is an N-channel power MOSFET designed for high current switching applications, packaged in a TO-263 (MP-25ZK) case. It has a drain-to-source voltage rating of 60 V, a continuous drain current of ±84 A, and a maximum on-state resistance of 5.3 mΩ at VGS = 10 V and ID = 42 A. The device features a built-in gate protection diode and a typical input capacitance of 5500 pF. It is rated for a channel temperature of up to 150 °C and a single avalanche energy of 245 mJ. The part is classified as "Standard" quality grade for general electronics applications.

Datasheet Summary
Powered by GS/AI

The 2SK3899 is an N-channel power MOSFET designed for high current switching applications, packaged in a TO-263 (MP-25ZK) case. It has a drain-to-source voltage rating of 60 V, a continuous drain current of ±84 A, and a maximum on-state resistance of 5.3 mΩ at VGS = 10 V and ID = 42 A. The device features a built-in gate protection diode and a typical input capacitance of 5500 pF. It is rated for a channel temperature of up to 150 °C and a single avalanche energy of 245 mJ. The part is classified as "Standard" quality grade for general electronics applications.

Suppliers

Company
Product
Description
Supplier Links
 - 2SK3899(0)-ZK-E1-AY - Rochester Electronics
Newburyport, MA, United States
Nch Single Power Mosfet 60V 84A

Nch Single Power Mosfet 60V 84A

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number 2SK3899(0)-ZK-E1-AY
Package Type TO-263; TO-263-3
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