Power Field-Effect Transistor, N-Channel MOSFET
Win Source Part Number: 1037808-2SK3814-AZ
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 30A, 10V
Power Dissipation (Max): 1W (Ta), 84W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 10 V
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): IRFU1018EPBF; IRLU3636PBF; IRFU1010ZPBF; IRFU7546PBF; IRFU3607PBF; IRFU2307ZPBF2SK3814A
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Other Names: RENRNS2SK3814-AZ,215
Product Status: Obsolete
| Rochester Electronics | Win Source Electronics | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK3814-AZ | 1037808-2SK3814-AZ |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | |
| Polarity | N-Channel | N-Channel |