Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 2SK3814-AZ

Description
Power Field-Effect Transistor, N-Channel MOSFET
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Description
Power Field-Effect Transistor, N-Channel MOSFET
Request a Quote Datasheet

Suppliers

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Product
Description
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 - 2SK3814-AZ - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, N-Channel MOSFET

Power Field-Effect Transistor, N-Channel MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1037808-2SK3814-AZ - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1037808-2SK3814-AZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1037808-2SK3814-AZ
Win Source Part Number: 1037808-2SK3814-AZ Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 30A, 10V Power Dissipation (Max): 1W (Ta), 84W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251 Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 10 V Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): IRFU1018EPBF; IRLU3636PBF; IRFU1010ZPBF; IRFU7546PBF; IRFU3607PBF; IRFU2307ZPBF2SK3814A Z; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Inc Other Names: RENRNS2SK3814-AZ,215 6-2SK3814-AZ-RE Product Status: Obsolete

Win Source Part Number: 1037808-2SK3814-AZ
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 30A, 10V
Power Dissipation (Max): 1W (Ta), 84W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 10 V
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): IRFU1018EPBF; IRLU3636PBF; IRFU1010ZPBF; IRFU7546PBF; IRFU3607PBF; IRFU2307ZPBF2SK3814AZ;
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Other Names: RENRNS2SK3814-AZ,2156-2SK3814-AZ-RE
Product Status: Obsolete

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Technical Specifications

  Rochester Electronics Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK3814-AZ 1037808-2SK3814-AZ
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity N-Channel N-Channel
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