Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 2SK3357-A

Win Source Part Number: 1006658-2SK3357-A
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 38A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P (MP-88)
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 10 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
REACH Status: Vendor Undefined
HTSUS: 8541.29.0075
Mfr: Renesas
Other Names: 2156-2SK3357-A
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
RoHS Status: RoHS non-compliant

2SK3357 - N-CHANNEL POWER MOSFET Product overview: 2SK3357-A from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK3357-A can be used for catalog matching and distributor lookup.